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Optically Detected Magnetic Resonance of Donors in AlxGa1−x as with High AlAs Fraction

Published online by Cambridge University Press:  26 February 2011

T. A. Kennedy ,
R. Magno ,
E. Glaser  and
M. G. Spencer
T. A. Kennedy
Affiliation:
Naval Research Laboratory, Washington, DC 20375
R. Magno
Affiliation:
Naval Research Laboratory, Washington, DC 20375
E. Glaser
Affiliation:
Naval Research Laboratory, Washington, DC 20375
M. G. Spencer
Affiliation:
Department of Electrical Engineering, Howard University, Washington, DC 20059
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Abstract

Optical and magnetic properties of donors in high AlAs-fraction AlxGa1−x As have been determined using optically-detected magnetic resonance. Many samples exhibit a sharp resonance at g = 1.95 detected on midgap luminescence. One high-quality sample exhibits an exhange-broadened line which reveals a distribution in donor-acceptor pair separations on moderately deep emission. A second high-quality sample exhibits the donor ODMR on donor-to-shallow- acceptor photoluminescence.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 555
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Lang, D.V. and Logan, R.A., Phys. Rev. Lett. 39, 635 (1979).Google Scholar
2.Saxena, A.K., Phys. Status Solidi b96, K77 (1979).Google Scholar
3.Nelson, R.J., Appl. Phys. Lett. 31, 351 (1977).Google Scholar
4.Zhou, B.L., Ploog, K., Gmelin, E., Zheng, X.Q. and Schulz, M., Appl. Phys. A28, 223 (1982).Google Scholar
5.Narayanamurti, V., Logan, R.A. and Chin, M.A., Phys. Rev. Lett. 43, 1536 (1979).Google Scholar
6.Duncan, W. and Schneider, E.E., Physics Letters 7, 23 (1963).Google Scholar
7.Weisbuch, C. and Hermann, C., Phys. Rev. BI 5, 816 (1977).Google Scholar
8.Bottcher, R., Wartewig, S., Bindemann, R., Kuhn, G. and Fischer, P., Phys. Status Solidi b58, K23 (1973).Google Scholar
9.Wartewig, S., Bottcher, R. and Kuhn, G., Phys. Status Solidi b70, K23 (1975).Google Scholar
10.Weber, E., in Microscopic Identification of Electronic Defects in Semiconductors, edited by Johnson, N.M., Bishop, S.G. and Watkins, G.D. (Mater. Res. Soc. Proc. 46, Pittsburgh, PA 1985) pp. 169–177.Google Scholar
11.Kennedy, T. A. and Spencer, M.G., Phys. Rev. Lett. 57, 2670 (1986).Google Scholar
12.Spencer, M.G., Kennedy, T.A., Magno, R. and Griffin, J., J. Vac. Sci. Technol. B5 762 (1987).Google Scholar
13.Kennedy, T.A., Magno, R. and Spencer, M.G., Phys. Rev. B, to be published.Google Scholar
14.Montie, E.A. and Henning, J.C.M., submitted to J. Phys. C.Google Scholar
15.Dingle, R., Logan, R.A. and Arthur, J.R. Jr, Inst. Phys. Conf. Ser. 33a, 210 (1977).Google Scholar
16.Kuech, T.F., Wolford, D.J., Potemski, R., Bradley, J.A., Kelleher, K.H., Yan, D., Farrell, J.P., Lesser, P.M.S. and Pollak, F.H., Appl. Phys Lett. 51, 505 (1987).Google Scholar
17. Further discussion of the arguments favoring oxygen is given in Ref. 13.Google Scholar
18.Davies, J.J., J. Cryst. Growth 72, 317 (1985).Google Scholar