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Optical Properties of Wurtzite-and Zincblende-GaN Films Grown by RF Plasma-MBE

Published online by Cambridge University Press:  21 February 2011

F. Semendy ,
N. Bambha ,
J.G. Kim ,
H. Liu  and
R.M. Park
F. Semendy
Affiliation:
Army Research Laboratory, Fort Belvoir, VA 22060, fsemendy@nvl.army.mil
N. Bambha
Affiliation:
Army Research Laboratory, Fort Belvoir, VA 22060, fsemendy@nvl.army.mil
J.G. Kim
Affiliation:
Department of Material Science and Engineering, University of Florida, FL 32611
H. Liu
Affiliation:
Department of Material Science and Engineering, University of Florida, FL 32611
R.M. Park
Affiliation:
Department of Material Science and Engineering, University of Florida, FL 32611
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Abstract

Both wurtzite-and zincblende-GaN films have been grown on sapphire and MgO substrates, respectively, and examined by photoluminescence and x-ray analysis. GaN films were grown on suitably prepared Al2O3 and MgO substrates by molecular beam epitaxy employing a rf plasma discharge, nitrogen free radical source. The wurtzite-and zincblende-GaN films exhibited dominant near band-edge emission, the nature of which will be compared and contrasted for both phases in this paper. X-ray diffraction data for both phases will also be discussed.

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References

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