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Optical, Electrical, and Structural Characterization of GaInAsP/InP Layers Grown on Silicon Substrate for 1.35 μm Laser Applications

Published online by Cambridge University Press:  25 February 2011

K. Mobarhan ,
C. Jelen ,
E. Kolev  and
M. Razeghi
K. Mobarhan
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
C. Jelen
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
E. Kolev
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
M. Razeghi
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
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Abstract

A 1.35 μm wavelength GaInAsP / InP double heterostructure laser has been grown on Si substrate by low-pressure metalorganic chemical vapor deposition. The layers are grown directly on Si substrate coated with GaAs. Material characterization confirms the overall quality of the epitaxial layers, including excellent crystallinity and optical properties in addition to precision control over the growth, composition and doping of the different layers. Pulsed operation with output power of over 200 mW per facet was achieved at room temperature for a broad area laser with 20 μm width and 170μm cavity length.

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References

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