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Optical Absorption Spectra Under DC Light Bias in Undoped a-Si:H

Published online by Cambridge University Press:  21 February 2011

J. Z. Liu ,
J. P. Conde ,
G. Lewen  and
P. Roca i Cabarrocas
J. Z. Liu
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton, NJ 08540
J. P. Conde
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton, NJ 08540
G. Lewen
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton, NJ 08540
P. Roca i Cabarrocas
Affiliation:
Laboratoire de Physique des Interfaces et Couches Minces, Ecole Polytechnique, 91128 Palaiseau Cedex, France
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Abstract

Under a dc light bias, the ac constant photocurrent method (CPM) yields an anomalous subgap optical absorption over that without the bias. When the intensity of the bias is high, an absorption band appears. However, absorption measured by ac photothermal deflection spectroscopy (PDS) is much less affected by the bias. A simple model qualitatively explains the effect on the PDS spectra and suggests that the anomalous CPM absorption is an apparent one which represents a variation of the recombination lifetime.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 795
Copyright
Copyright © Materials Research Society 1992

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References

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