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On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films

Published online by Cambridge University Press:  22 February 2011

Mark S. Rodder  and
Dimitri A. Antoniadis
Mark S. Rodder
Affiliation:
Texas Instruments Inc., Dallas, TX 75265
Dimitri A. Antoniadis
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

It is shown that the grain boundary (GB) in polycrystalline-silicon (poly-Si) films need not be modeled as a temperature-dependent potential barrier or as an amorphous region to explain the temperature (T) dependence of resistivity (ρ) in p-type poly-Si films at low T. Specifically, we consider that QB defect states allow for the tunneling component of current to occur by a two-step process. Incorporation of the two-step process in a numerical calculation of ρ vs. T results in excellent agreement with available data from 100 K to 300 K.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 77
Copyright
Copyright © Materials Research Society 1988

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References

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