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On the Origin of the Contrast Inhomogeneities Found on In0.52Al0.48As Layers Grown on InP Substrates At High Temperatures

Published online by Cambridge University Press:  25 February 2011

F. Peiro ,
A. Cornet ,
J. R. Morante  and
A. Georgakilas
F. Peiro
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. U. Barcelona. Diagonal 645–647. 08028 Barcelona, Spain. Serveis Científico-Tècnics. U. Barcelona. L. Solé i Sabarís, 1–3. 08028 Barcelona, Spain.
A. Cornet
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. U. Barcelona. Diagonal 645–647. 08028 Barcelona, Spain.
J. R. Morante
Affiliation:
LCMM. Dept. Física Aplicada i Electrònica. U. Barcelona. Diagonal 645–647. 08028 Barcelona, Spain.
A. Georgakilas
Affiliation:
CALCE. Electr. Pack. Research Center, Univ. Maryland, College Park, MD 20742., USA.
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Abstract

The present work deal with the coarse contrast modulation along the <010> directions observed in (100) planar view TEM observations of In0.52Al0.48As layers grown on InP substrates at temperatures higher than 550°C. The most important features of these contrast inhomogeneites are briefly reviewed. Besides, the appearance of the contrast in [011] cross-sectioned specimens is presented and its origin related to precipitates at the layer-substrate interface. The density of precipitates (ρp) has been found to increase as T g rises, and an approximate value of the activation energy needed to induce the precipitation has been derived from the correlation of ρp and T g.

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References

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