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Nucleation and Growth of Cvd Polycrystalline Si3N4 Films at Low Temperatures

Published online by Cambridge University Press:  25 February 2011

Frederick S. Lauten ,
Janet Rankin  and
Brian W. Sheldon
Frederick S. Lauten
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912.
Janet Rankin
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912.
Brian W. Sheldon
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912.
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Abstract

Silicon nitride films were deposited from silane and ammonia onto single crystal silicon substrates at a total pressure of 4.7 kPa. At temperatures below 1200° C, continuous films of polycrystalline Si3N4 deposited within a narrow region of low SiH4 partial pressures but at relatively high growth rates, for example, > 10 μm/hr at 1170° C. The early stages of crystalline film growth were studied with a combination of analytical techniques: FT-IR spectroscopy, x-ray and electron diffraction and electron microscopy. During deposition faceted Si3N4 grains nucleate on a growing nanocrystalline/amorphous interlayer.

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