Hostname: page-component-54dcc4c588-5q6g5 Total loading time: 0 Render date: 2025-10-12T01:42:06.623Z Has data issue: false hasContentIssue false
  • English
  • Français

Nucleation and Growth Dependence of ALD WNC on Substrate SurfaceCondition

Published online by Cambridge University Press:  17 March 2011

Get access

Abstract

ALD WNC nucleation and growth was observed strongly affected by differentsubstrate materials and surface chemistries. Nucleation was inhibited onmost pristine low k surfaces, which is attributed to low concentrations ofchemisorption sites (Si-OH). Plasma treatments were used to alter thesurface chemistry to improve nucleation. Surface closure and surfaceroughness of the WNC layer were found to strongly correlate with startingsurface condition. Resistivities of the resulting films were also founddependent on starting surface treatment. But the relationship between Wcontent of the films, surface treatment and resistivity was not fullycomprehended.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1.International Technology Roadmap for Semiconductors, p75, 2002 UpdateGoogle Scholar
2.Leskela, M., Ritala, M., Thin Solid Films 409, 138 (2002)CrossRefGoogle Scholar
3.Puurunen, R.L., Vandervorst, W., submitted for publicationGoogle Scholar
4.Beyer, G., Satta, A., Schuhmacher, J., Maex, K., Besling, W., Kilpela, O., Sprey, H., Tempel, G., Microelectronic Engr. (64) p233–245, 2002CrossRefGoogle Scholar
5.Abell, T., Maex, K., Microelectronic Engr., in press.Google Scholar
6.Li, W.M., Elers, K., Kostamo, J., Kaipo, S., Huotari, H., Soininen, M., Soininen, P.J., Tuominen, M., Hauka, S., Smith, S., Besling, W., Proceedings of IITC 2002, (IEEE NY), 2002.Google Scholar