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Novel Approach for Fabrication of Single-Crystalline Insulator/Si/Insulator Nanostructures

Published online by Cambridge University Press:  01 February 2011

Andreas Fissel ,
Dirk Kuehne ,
Eberhard Bugiel  and
H. Joerg Osten
Andreas Fissel
Affiliation:
fissel@lfi.uni-hannover.de, University of Hannover, Information Technology Laboratory, Schneiderberg 32, Hannover, N/A, D-30167, Germany
Dirk Kuehne
Affiliation:
kuehne@lfi.uni-hannover.de, University of Hannover, Information Technology Laboratory, Schneiderberg 32, Hannover, N/A, D-30167, Germany
Eberhard Bugiel
Affiliation:
bugiel@mbe.uni-hannover.de, University of Hannover, Institute of Electronic Materials and Devices, Appelstr. 11A, Hannover, N/A, D-30167, Germany
H. Joerg Osten
Affiliation:
osten@mbe.uni-hannover.de, University of Hannover, Institute of Electronic Materials and Devices, Appelstr. 11A, Hannover, N/A, D-30167, Germany
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Abstract

Double-barrier insulator/Si/insulator nanostructures on Si(111) were prepared using molecular beam epitaxy. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si islands into single-crystalline Gd2O3. The I-V characteristic of the obtained nanostructures exhibited negative differential resistance at low temperatures, however, with a strong memory effect.

Keywords

nanostructuremolecular beam epitaxy (MBE)oxide

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 928: Symposium GG – Current and Future Trends of Functional Oxide Films , 2006 , 0928-GG03-04
Copyright
Copyright © Materials Research Society 2006

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