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Nonstoichiometry and Doping of Zinc Oxide

Published online by Cambridge University Press:  15 February 2011

Arthur W. Sleight  and
Ruiping Wang
Arthur W. Sleight
Affiliation:
Department of Chemistry, Oregon State University, Corvallis, OR 97331–4003, sleighta@ccmail.orst.edu
Ruiping Wang
Affiliation:
Applied Materials, Applied Materials, 3100 Bowers Ave/Mail Stop 1125, Sunnyvale, CA 95054
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Abstract

Contrary to the commonly accepted model, we conclude that the zinc interstitials in Zn1+xO are not ionized. Instead, the electron pair associated with the interstitial zinc is trapped in a metal—metal bond. The increase in conductivity on initial reduction of zinc oxide is associated with impurities such as silicon which are compensated by extra oxygen unless removed by reduction. Zinc oxide powders and thin films were prepared with the dopants B, Al, Ga, In, and Ge. By using high temperatures and highly reducing conditions, conductivities 1000 times higher than previously reported for powders were obtained for some of our powders.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 453: Symposium R – Solid State Chemistry of Inorganic Materials , 1996 , 323
Copyright
Copyright © Materials Research Society 1997

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References

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