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Noise Characterization of Polycrystalline Silicon Thin Film Transistors for X-ray Imagers Based on Active Pixel Architectures

Published online by Cambridge University Press:  01 February 2011

L. E. Antonuk ,
M. Koniczek ,
J. McDonald ,
Y. El-Mohri ,
Q. Zhao  and
M. Behravan
L. E. Antonuk
Affiliation:
antonuk@med.umich.edu, University of Michigan, Radiation Oncology, 519 West william street, Argus 1, Ann Arbor, MI, 48103, United States
M. Koniczek
Affiliation:
koniczek@umich.edu, University of Michigan, Department of Radiation Oncology, Ann Arbor, MI, 48109, United States
J. McDonald
Affiliation:
johngm@umich.edu, University of Michigan, Department of Radiation Oncology, Ann Arbor, MI, 48109, United States
Y. El-Mohri
Affiliation:
elmohri@umich.edu, University of Michigan, Department of Radiation Oncology, Ann Arbor, MI, 48109, United States
Q. Zhao
Affiliation:
qizhao@umich.edu, University of Michigan, Department of Radiation Oncology, Ann Arbor, MI, 48109, United States
M. Behravan
Affiliation:
mahdokht@umich.edu, University of Michigan, Department of Radiation Oncology, Ann Arbor, MI, 48109, United States
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Abstract

An examination of the noise of polycrystalline silicon thin film transistors, in the context of flat panel x-ray imager development, is reported. The study was conducted in the spirit of exploring how the 1/f, shot and thermal noise components of poly-Si TFTs, determined from current noise power spectral density measurements, as well as through calculation, can be used to assist in the development of imagers incorporating pixel amplification circuits based on such transistors.

Keywords

thin filmsimulationpolycrystal

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References

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