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Next Generation of High Temperature Structural Intermetallic Compounds

Published online by Cambridge University Press:  15 February 2011

Pedro B. Cells ,
K. Ishizaki ,
E. Kagawa  and
J. Ishikawa
Pedro B. Cells
Affiliation:
Nagaoka University of Technology, Department of Materials Science and Engineering, School of Mechanical Engineering, Nagaoka, Niigata 940–21, Japan.
K. Ishizaki
Affiliation:
Nagaoka University of Technology, Department of Materials Science and Engineering, School of Mechanical Engineering, Nagaoka, Niigata 940–21, Japan.
E. Kagawa
Affiliation:
Nagaoka University of Technology, Department of Materials Science and Engineering, School of Mechanical Engineering, Nagaoka, Niigata 940–21, Japan.
J. Ishikawa
Affiliation:
Nagaoka University of Technology, Department of Materials Science and Engineering, School of Mechanical Engineering, Nagaoka, Niigata 940–21, Japan.
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Abstract

Silicon compounds with the (Mn5Si3)16H crystal structure in particular, have a high melting point, which is a necessary characteristic of high temperature structural materials. The compounds Si3Zr5 and Si3Ti2Zr3 with that crystal structure and with melting points around 2500 K, were densified by using a hot isostatic process (HIP) in a glass capsule. This crystal structure shows good creep resistance, which might be due to the particularly large silicon interatomic distance. The high melting point and good creep resistance, make these intermetallics good candidates for the next generation of high temperature structural materials.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 251: Symposium S – Pressure Effects on Materials Processing and Design , 1991 , 9
Copyright
Copyright © Materials Research Society 1992

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References

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