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Multilevel Contact System with a Thin Silicide Reaction Controlling Interlayer

Published online by Cambridge University Press:  03 September 2012

F. Fenske ,
S. Schulze ,
B. Selle ,
H. Lange  and
W. Wolke
F. Fenske
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Dept. Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
S. Schulze
Affiliation:
Technical University Chemnitz-Zwickau, Dept. Physics, PF 964, D-09009 Chemnitz, Germany
B. Selle
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Dept. Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
H. Lange
Affiliation:
Hahn-Meitner-Institut Berlin GmbH, Dept. Photovoltaik, Rudower Chaussee 5, D-12489 Berlin, Germany
W. Wolke
Affiliation:
Technical University Chemnitz-Zwickau, Dept. Physics, PF 964, D-09009 Chemnitz, Germany
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Abstract

Taking advantage of controllable interdiffusion and reaction processes by using a 50 nm thin Ti interlayer an annealing step in the temperature range from 450 to 475°C transforms the TiNiAg layer sequence on silicon into a stable final state, whereby a contamination free, homogeneous nanoscale NiSi contact layer arises with low values of the contact resistance. Intercalating a thin Ti layer the nickel silicide growth rate is lowered by 2 orders of magnitude. Low sheet resistance and a good bondability are preserved by the remaining Ni-Ag top layer sequence which does not interact during the contact formation process.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 427
Copyright
Copyright © Materials Research Society 1994

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References

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