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Morphological study of InN films and nanorods grown by H-MOVPE

Published online by Cambridge University Press:  01 February 2011

Hyun Jong Park ,
Sang Won Kang ,
Olga Kryliouk  and
Tim Anderson
Hyun Jong Park
Affiliation:
hyun@che.ufl.edu, University of Florida, Chemical Engineering, Bldg. 723 Room 118, Chemical Engineering, University of Florida, Gainesville, FL, 32611-6005, United States, 352-846-2989, 352-392-9513
Sang Won Kang
Affiliation:
sang1.kang@samsung.com, University of Florida, Chemical Engineering, United States
Olga Kryliouk
Affiliation:
olgak@grove.ufl.edu, University of Florida, Chemical Engineering, United States
Tim Anderson
Affiliation:
tim@ufl.edu, University of Florida, Chemical Engineering, United States
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Abstract

Hydride-Metalorganic Vapor Phase Epitaxy (H-MOVPE) was used to grow a series of films on c-Al2O3 substrates. Depending on the growth temperature and HCl/TMIn molar ratio, InN deposited as a continuous film or a collection of micro or nanorods, or no InN growth was observed. A chemical equilibrium analysis of the In-N-H-Cl system predicts both InN growth and etching regimes with the nanorod growth observed near the growth-etching transition. All InN rod structures demonstrated well faceted hexagonal structure with a near random orientation of the rods, while the films were polycrystalline.

Keywords

Innitridemorphology

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF11-09
Copyright
Copyright © Materials Research Society 2006

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References

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