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Monte Carlo Atomistic Simulation of Polycrystalline Aluminum Deposition

Published online by Cambridge University Press:  10 February 2011

J. Emiliano Rubio ,
Martín Jaraíz ,
Luis A. BaiIón ,
Juan Barbolla ,
M José López  and
George H. Gilmer
J. Emiliano Rubio
Affiliation:
Univ. of Valladolid, Dpt. de Electricidad y Electrónica, Valladolid, SPAIN
Martín Jaraíz
Affiliation:
Univ. of Valladolid, Dpt. de Electricidad y Electrónica, Valladolid, SPAIN
Luis A. BaiIón
Affiliation:
Univ. of Valladolid, Dpt. de Electricidad y Electrónica, Valladolid, SPAIN
Juan Barbolla
Affiliation:
Univ. of Valladolid, Dpt. de Electricidad y Electrónica, Valladolid, SPAIN
M José López
Affiliation:
Univ. of Valladolid, Dpt. de Físíca Teórica, Atímica y Nuclear, Valladolid, SPAIN
George H. Gilmer
Affiliation:
Lucent Tech. Bell Labs, Murray Hill, NJ.
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Abstract

A new atomistic scheme for simulating polycrystalline thin film deposition based on a Monte Carlo approach has been developed. Simulations of polycrystalline aluminum deposition and annealing at different temperatures are presented. The time evolution of the film morphology for those temperatures is discussed. During deposition, columnar growth is observed at low temperatures. Grain growth takes place mainly during annealing. Faceting and selection of preferred crystal orientations (texture) is observed.

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References

REFERENCES

1. Goldham, W., Neureuther, A.R., Sung, C., Reynolds, J.L., Nandgaonkar, S.N., IEEE Trans. Elect. Dev. 39, 1599 (1992)Google Scholar
2. McVittie, J., Rey, J., Bariya, A., Islamraja, M., Cheng, L., Ravi, S., Sarawat, D., Proc SPIE 1392, 126 (1990).10.1117/12.48908Google Scholar
3. Cale, T.S., Raupp, G.B., Journal of Vacuum Sci. and Tech. B 8, 1242 (1990)Google Scholar
4. Smy, T., Dew, S.K., Brett, M.J., MRS Bulletin, 20, 65 (1995)10.1557/S0883769400045619Google Scholar
5. Thompson, M.W., Philos. Mag, 18, 377 (1968)Google Scholar
6. Gupta, R.P., Phys. Rev. B 23, 6225 (1981).Google Scholar
7. Huang, H., Gilmer, G., Rubia, T. Díaz de la, to be published.Google Scholar