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Modification of the electronic properties of a-Si1-xCx:H by Fe+ ionimplantation

Published online by Cambridge University Press:  17 March 2011

T. Tsvetkova ,
S. Balabanov ,
B. Amov ,
Ch. Angelov ,
J. Zuk ,
D. Maczka ,
G.J. Adriaenssens  and
K. Iakoubovskii
T. Tsvetkova
Affiliation:
Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria
S. Balabanov
Affiliation:
Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria
B. Amov
Affiliation:
Institute of Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria
Ch. Angelov
Affiliation:
Institute of Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria
J. Zuk
Affiliation:
Maria Curie-Sklodowska University, Pl. M.Curie-Sklodowskiej 1, Lublin, Poland
D. Maczka
Affiliation:
Maria Curie-Sklodowska University, Pl. M.Curie-Sklodowskiej 1, Lublin, Poland
G.J. Adriaenssens
Affiliation:
Halfgeleiderfysica, University of Leuven, B-3001 Leuven, Belgium
K. Iakoubovskii
Affiliation:
Halfgeleiderfysica, University of Leuven, B-3001 Leuven, Belgium
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Abstract

The electrical and optical properties of hydrogenated amorphoussilicon-carbide alloy films (a-Si1-xCx:H), modified by Fe+ ion implantation (D = 1×1016 - 1×1017 cm-2), have been investigated. Opticaltransmission spectra have been measured in the visible range (400-900 nm)and considerable absorption edge shift to the longer wavelength region hasbeen registered, together with well-defined decrease of transmittance in thewhole measured range. These effects are increased with the dose and aresimilar for samples with different carbon content (x1=0.08 and x2=0.15). Room temperature (RT) surface electricalconductivity is also increased by Fe+ implantation and the effectis most pronounced for the highest doses (D ~1017cm-2). The temperature dependence of theconductivity was measured in the temperature range from RT to 250 oC. The activation energy is considerably reduced and theeffect is again strongest for the highest doses. From the above results weconclude that high doses Fe+ implantation in a-Si1-xCx:H affects both the localised states deepin the gap and the shallow states in the band tails.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O5.13
Copyright
Copyright © Materials Research Society 2001

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