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Modification of Cu(In, Ga)Se2 Surface by Treatment in Cadmium Solutions

Published online by Cambridge University Press:  01 February 2011

Q. Nguyen ,
G. Bilger ,
U. Rau  and
H.W. Schock
Q. Nguyen
Affiliation:
Institute of Physical Electronics, University of Stuttgart Pfaffenwaldring 47, 70569 Stuttgart, Germany
G. Bilger
Affiliation:
Institute of Physical Electronics, University of Stuttgart Pfaffenwaldring 47, 70569 Stuttgart, Germany
U. Rau
Affiliation:
Institute of Physical Electronics, University of Stuttgart Pfaffenwaldring 47, 70569 Stuttgart, Germany
H.W. Schock
Affiliation:
Institute of Physical Electronics, University of Stuttgart Pfaffenwaldring 47, 70569 Stuttgart, Germany
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Abstract

This article investigates chemical modifications of Cu(In, Ga)Se2 thin film by treatment in cadmium solutions with varying [NH3] concentration. Secondary ions mass spectroscopy and Xray photoelectron-spectroscopy analysis show that Cd-diffusion into the Cu(In, Ga)Se2 film is intimately tied to the reduction-oxidation of the Cu(In, Ga)Se2 surface, which is controlled by the [NH3] concentration. Reaction products, like Se and metal hydroxides of the redox process as wellas thediffusedCdinCu(In, Ga)Se2 film, result in degradation of solar cell performance.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B8.17
Copyright
Copyright © Materials Research Society 2003

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