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A Modeling Study of GaN Growth by MOVPE

Published online by Cambridge University Press:  21 February 2011

S.A. Safvi ,
J.M. Redwing ,
M.A. Tischler  and
T.F. Kuech
S.A. Safvi
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
J.M. Redwing
Affiliation:
Advanced Technology Materials, Danbury, CT 06810
M.A. Tischler
Affiliation:
Advanced Technology Materials, Danbury, CT 06810
T.F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
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Abstract

A model for the growth of gallium nitride in a vertical metalorganic vapor phase epitaxy reactor is presented. For a mixture of non-dilute gases, the flow temperature and concentration profiles are predicted. The results show that the growth of GaN epilayers is through an intermediate adduct of TMG and ammonia. Growth rates are predicted based on simple reaction mechanisms and compared with those obtained experimentally. Loss of adduct species due to polymerization leads to lowering in growth rate. An attempt to quantify loss of reacting species is made based on experimentally observed growth rates.

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References

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