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Modeling MOCVD Growth of YBCO Thin Films

Published online by Cambridge University Press:  17 March 2011

Tak Shing Lo  and
Robert V. Kohn
Tak Shing Lo
Affiliation:
Courant Insitute of Mathematical Sciences, New York University, 251 Mercer St., New York, NY 10012, U.S.A
Robert V. Kohn
Affiliation:
Courant Insitute of Mathematical Sciences, New York University, 251 Mercer St., New York, NY 10012, U.S.A
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Abstract

We develop a new approach to the modeling of thin film growth. Our model treats the adatom density on the surface of the film as an explict unknown. This approach (1) clarifies the role of the “uphill current” associated with the Schwoebel barrier; (2) facilitates simple, physically natural coupling to the mechanism of deposition; and (3) permits discussion of multispecies effects. Our implementation focuses on spiral mode growth of YBCO thin films, with MOCVD (Metallorganic chemical vapor deposition) as the deposition mechanism.

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