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Minority Carrier Lifetime Studies in Halogen Lamp Recrystallized Soi Films

Published online by Cambridge University Press:  28 February 2011

A. Chantre ,
D. Ronzani  and
D. P. Vu
A. Chantre
Affiliation:
Centre National d'Etudes des Télécommunications, B.P.:98, 38243 Meylan Cedex, France
D. Ronzani
Affiliation:
Centre National d'Etudes des Télécommunications, B.P.:98, 38243 Meylan Cedex, France
D. P. Vu
Affiliation:
Centre National d'Etudes des Télécommunications, B.P.:98, 38243 Meylan Cedex, France
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Abstract

We report a detailed investigation of minority carrier generation processes in halogen lamp recrystallized SOI films. Various kinds of materials have been analyzed in order to assess the roles of the different crystallographic imperfections present in the layers (precipitates, subgrain boundaries, interfaces). We conclude that generation lifetimes inprecipitate-free material are controlled by subgrain boundaries, and show that 100 μs lifetimes can be measured in defect-free regions of SOI obtained using a defect localization technique.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 349
Copyright
Copyright © Materials Research Society 1986

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Footnotes

*

Present address: AT&T Bell Laboratories, Murray Hill, NJ 07974, USA

†

deceased

References

REFERENCES

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