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The Microstructure of Gold Films Written by Focused Ion Beam Induced Deposition

Published online by Cambridge University Press:  25 February 2011

Patricia G. Blauner ,
Jae Sang Ro ,
Yousaf Butt ,
Carl V. Thompson  and
John Melngailis
Patricia G. Blauner
Affiliation:
Research Laboratory of Electronics Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Jae Sang Ro
Affiliation:
Research Laboratory of Electronics Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Yousaf Butt
Affiliation:
Research Laboratory of Electronics Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Carl V. Thompson
Affiliation:
Research Laboratory of Electronics Massachusetts Institute of Technology, Cambridge, MA 02139, USA
John Melngailis
Affiliation:
Research Laboratory of Electronics Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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Abstract

Focused ion beam induced deposition of gold microfeatures is accomplished by 40 keV Ga+ bombardment of a substrate on which dimethyl gold hexafluoro acetylacetonate is continuously adsorbed. Under optimum conditions, deposition rates exceeding 11 Å/s have been achieved as well as high aspect ratio features, linewidths of approximately 0.1.μm, and resistivities of 500—1500 μΩcm. The microstructure, composition, and yield of the deposits have been examined as a function of various process parameters. Improved film growth and purity are observed in deposits made with lower organometallic pressures or higher current densities.

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References

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