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Microstructure of Epitaxial Al(111)/Si(111) Films Studied by Synchrotron Grazing Incidence X-Ray Diffraction

Published online by Cambridge University Press:  25 February 2011

H. H. Hung ,
K. S. Liang ,
C. H. Lee  and
T.-M. Lu
H. H. Hung
Affiliation:
Exxon Research & Engineering Co., Annandale, NJ 08801 Synchrotron Radiation Research Center, Taiwan, R.O.C.
K. S. Liang
Affiliation:
Exxon Research & Engineering Co., Annandale, NJ 08801
C. H. Lee
Affiliation:
Exxon Research & Engineering Co., Annandale, NJ 08801 Synchrotron Radiation Research Center, Taiwan, R.O.C.
T.-M. Lu
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

We report the results of our x-ray diffraction studies on epitaxial Al(111)/Si(111) films prepared by the partially ionized beam deposition technique. Significant changes were observed in intensity profiles for samples before and after annealing. In the in-plane radial scan of Al(220) peak, the shift of Bragg peak is shown due to misfit strain. A weak satellite is also observed which indicates a semicoherent interfacial structure of the annealed film with misfit dislocations. A possible picture of misfit-induced incommensurate structure of Al films is discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 301
Copyright
Copyright © Materials Research Society 1991

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References

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