Hostname: page-component-54dcc4c588-mz6gc Total loading time: 0 Render date: 2025-10-11T06:45:05.247Z Has data issue: false hasContentIssue false
  • English
  • Français

Micro-Raman Study of Mechanical Stress in Polycrystalline Silicon Bridges

Published online by Cambridge University Press:  10 February 2011

H. Talaat ,
S. Negm ,
H. Schaffer ,
G. Kaltsas  and
A. G. Nassiopoulou
H. Talaat
Affiliation:
Faculty of Science, Ain Shams University, Cairo, Egypt.
S. Negm
Affiliation:
Faculty of Science, Ain Shams University, Cairo, Egypt.
H. Schaffer
Affiliation:
Instruments SA, Edison, NJ, USA 08820.
G. Kaltsas
Affiliation:
Institute of Microelectronics, NCSR Demokritos, P.O. Box 60228, GR- 15310 Aghia Paraskevi Attikis, Athens, Greece.
A. G. Nassiopoulou
Affiliation:
Institute of Microelectronics, NCSR Demokritos, P.O. Box 60228, GR- 15310 Aghia Paraskevi Attikis, Athens, Greece.
Get access

Abstract

Micro-Raman spectroscopy is used to study mechanical stress distribution in polycrystalline silicon bridges on cavities micromachined in crystalline Si wafers. The influence of the processing parameters such as the thickness of polycrystalline membrane, the annealing conditions (before or after removal of the sacrificial porous-Si layer ), are studied. The results indicate that the annealing reduces the residual stress by an order of magnitude and that the membrane thickness of 2.5 μm has the least residual stress.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 495
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Wolf, I. De, Semicond. Sci. Technol. 11, p.139 (1996).Google Scholar
2.Wolf, I. De, Vanhellemont, Romano-Rodriguez, A., Norstrom, H. and Maes, H. E., J. Appl. Phys. 71, p.898 (1992).Google Scholar
3.Anastassakis, E. and Liarokapis, E., J.Appl. Phys. 62, p. 3346 (1987).Google Scholar
4.Kaltsas, J. and Nassiopoulos, A. G., Microel. Engineering 35, p.397 (1997).Google Scholar
5.Kaltsas, G. and Nassiopoulos, A. G., Mat. Res. Soc. Symp. proc., vol.459 (1997) 249..Google Scholar
6.Hu, S. M., J. Appl. Phys. 70, R53 (1991).Google Scholar