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Mev Ion Beam Applications In III-V Semiconductors

Published online by Cambridge University Press:  25 February 2011

R.G. Elliman ,
M.C. Ridgway ,
S.T. JOHNSON  and
J.S. Williams
R.G. Elliman
Affiliation:
Also Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Australia
M.C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences, Australian National University, Canberra, Australia
S.T. JOHNSON
Affiliation:
Also Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Australia
J.S. Williams
Affiliation:
Also Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Australia
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Abstract

This paper reviews some key areas where MeV ion beams can be applied to III-V semiconductor materials. In particular, ion damage is assessed for various III-V materials in terms of implantation parameters, especially substrate temperature and dose rate. Implant isolation, involving the introduction of damage to remove carriers and achieve highlyresistive layers, is assessed for MeV irradiation. It is concluded that MeV ions can provide deep, uniform damage with a single-energy implant. Finally, improved epitaxy of amorphous InP with MeV ions is demonstrated.

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