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Metastability of Light-Induced Defects in Very Low Density of Gap States α- Si1-αCα:H Alloys

Published online by Cambridge University Press:  21 February 2011

M. Sebastiani ,
P. Fiorini ,
F. Alvarez ,
F. Pozzilli ,
O. Pulci  and
F. Evangelisti
M. Sebastiani
Affiliation:
Department of Physics, University “La Sapienza” P.le Aldo Moro 2, 00185 Rome, Italy
P. Fiorini
Affiliation:
Department of Physics, University “La Sapienza” P.le Aldo Moro 2, 00185 Rome, Italy
F. Alvarez
Affiliation:
Department of Physics, University “La Sapienza” P.le Aldo Moro 2, 00185 Rome, Italy
F. Pozzilli
Affiliation:
Department of Physics, University “La Sapienza” P.le Aldo Moro 2, 00185 Rome, Italy
O. Pulci
Affiliation:
Department of Physics, University “La Sapienza” P.le Aldo Moro 2, 00185 Rome, Italy
F. Evangelisti
Affiliation:
Department of Physics, University “La Sapienza” P.le Aldo Moro 2, 00185 Rome, Italy
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Abstract

We have prepared silicon carbon alloys with Tauc's gap of 2.1 eV, low defect density (≃ 3–1015cm-3) and large photoconductivity (αPhoto/αdark=105 in AM 1.5 illumination). On these samples light soaking induces a large number of metastable gap defects which are annealed out at 250 °C. We have studied the kinetics of defect formation varying the duration of light exposure and the light intensity. The experimental data are consistent with a bond breaking model (conversion of tail weak bonds into dangling bonds), provided that the actual occupation of tail states is taken into account.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 601
Copyright
Copyright © Materials Research Society 1992

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References

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