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Melting of Ion Implanted and Relaxed Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

M.G. Grimaldi ,
P. Baeri  and
G. Baratta
M.G. Grimaldi
Affiliation:
Dipartimento di Fisica, 57 Corso Italia, 195129, Catania, Italy
P. Baeri
Affiliation:
Dipartimento di Fisica, 57 Corso Italia, 195129, Catania, Italy
G. Baratta
Affiliation:
Istituto di Astronomia, viale A. Doria, 195100, Catania, Italy
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Abstract

The difference in the melting temperature of ion implanted and relaxed amorphous silicon has been measured. Pulsed laser irradiation (λ=347 nm, τ=30 ns) has been used to induce surface melting in the amorphous layer and time resolved reflectivity to detect the melting onset. The threshold energy density for surface melting in the relaxed amorphous was found 15.9±.3% higher than that in the unrelaxed one. The estimate of the variation of the thermal parameters in amorphous silicon upon relaxation allowed a determination of ΔTM=45±10 K between relaxed and unrelaxed amorphous silicon.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 419
Copyright
Copyright © Materials Research Society 1990

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References

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