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Measurements of Stress Evolution During Thin Film Deposition

Published online by Cambridge University Press:  15 February 2011

E. Chason  and
J. A. Floro
E. Chason
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1415
J. A. Floro
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–1415
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Abstract

We have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 436: Symposium CC – Thin Films Stresses and Mechanical Properties VI , 1996 , 417
Copyright
Copyright © Materials Research Society 1997

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References

1. Doerner, M.F., Nix, W.D., CRC Crit. Rev. in Solid State and Mater. Sci. 14, 225 (1988).Google Scholar
2. Flinn, P., Gardner and Nix. IEEE Trans. Elec. Dev. ED–34, 689 (1987).Google Scholar
3. Volkert, C.A., J. Appl. Phys. 70, 3521 (1991).Google Scholar
4. Ruud, J.A., Witvrouw, A. and Spaepen, F.A., J. Appl. Phys 74, 2517 (1993).Google Scholar
5. Shull, A.L., Zolla, H.G. and Spaepen, F.A., Mat. Res. Soc. Symp. Proc. 356, 345 (1995).Google Scholar
6. Martinez, R., Augustyniak, A. and Golovcenko, J.A., Phys. Rev. Lett. 64, 1035 (1990).Google Scholar
7. Schell-Sorokin, A. and Tromp, R.,Phys. Rev. Lett. 64, 1039 (1990).Google Scholar
8. Geisz, et al., J. Appl. Phys. 75, 1530 (1994)Google Scholar
9. Fujita, K., Fukutsu, S., Yaguchi, H., Shiraki, Y. and Ito, R., Appl. Phys. Lett. 59, 2103 (1991).Google Scholar
10. Godbey, D.J. and Ancona, M.G., Appl. Phys. Lett. 61, 2217 (1992).Google Scholar
11. Floro, J.A. and Chason, E., unpublished.Google Scholar
12. Floro, J.A. and Chason, E., Mat. Res. Soc. Symp. Proc, 1996 (in press).Google Scholar