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Measurement of Thermally-Induced Strains in Polycrystalline Al Thin Films on Si Using Convergent Beam Electron Diffraction

Published online by Cambridge University Press:  15 February 2011

S. K. Streiffer ,
S. Bader ,
C. Deininger ,
J. Mayer  and
M. Rühle
S. K. Streiffer
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, Seestraβe 92, D-70174 Stuttgart, Germany
S. Bader
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, Seestraβe 92, D-70174 Stuttgart, Germany
C. Deininger
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, Seestraβe 92, D-70174 Stuttgart, Germany
J. Mayer
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, Seestraβe 92, D-70174 Stuttgart, Germany
M. Rühle
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Werkstoffwissenschaft, Seestraβe 92, D-70174 Stuttgart, Germany
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Abstract

Strains in polycrystalline Al films grown on oxidized Si wafers were measured using convergent beam electron diffraction (CBED). CBED patterns were acquired on a Zeiss EM 912 TEM equipped with an imaging energy filter and CCD camera. HOLZ line positions in the (000) CBED disk were matched using an automated refinement procedure. A sensitivity to variations in lattice parameter of approximately 0.00007 nm was obtained. Strong deviations from a simple equibiaxial strain, perfect [111] texture model were observed.

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References

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