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Measurement of Fast Melting and Regrowth Velocities in Picosecond Laser Heated Silicon

Published online by Cambridge University Press:  15 February 2011

P. H. Bucksbaum  and
J. Bokor
P. H. Bucksbaum
Affiliation:
Bell Telephone Laboratories, Holmdel, New Jersey, USA
J. Bokor
Affiliation:
Bell Telephone Laboratories, Holmdel, New Jersey, USA
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Abstract

Fast regrowth of amorphous silicon from liquid silicon films has been directly observed in a time resolved picosecond laser melting experiment. Liquid films up to 100 nm thick were formed on crystalline substrates with 15 picosecond 248 nm pulses from a KrF* excimer laser. The film thickness as a function of time was probed directly by observing attenuation of 1.64 pm 15 psec light pulses transmitted through the melt. Melting and regrowth velocities were compared to a heat diffusion model, and evidence for melt undercooling was observed. The resolidified silicon was amorphous at all values of incident laser intensity.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 51
Copyright
Copyright © Materials Research Society 1983

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References

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