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Measurement and Control of The Indium Composition Profile Near The InGaAs on GaAs Interface During Mbe

Published online by Cambridge University Press:  15 February 2011

Ron Kaspi  and
Keith R. Evans
Ron Kaspi
Affiliation:
Wright State University, University Research Center, Dayton, OH 45435
Keith R. Evans
Affiliation:
Wright Laboratory, Solid State Electronics Directorate (WL/ELDM), Wright-Patterson AFB, OH 45433
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Abstract

The compositional abruptness at both the normal and the inverted InGaAs/Ga(Al)As interface is inherently limited by the surface segregation of In atoms during molecular beam epitaxy. We find, for example, that the intended alloy composition in In0.22Ga0.78As layers is not reached until nearly 35 Å from the normal InGaAs on GaAs interface for growth at 500 °C. We propose and demonstrate a scheme to control and eliminate the compositionally graded region at the normal interface by the artificial formation of an In surface segregated layer (predeposition) prior to the growth of InGaAs.

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References

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