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MBE Growth of Cubic InN

Published online by Cambridge University Press:  01 February 2011

Jörg Schörmann ,
Donat Josef As  and
Klaus Lischka
Jörg Schörmann
Affiliation:
University of Paderborn, Department of Physics, Warburger Strasse 100, Paderborn, 33095, Germany, +49 5251 60 5838, +49 5251 60 5843
Donat Josef As
Affiliation:
d.as@uni-paderborn.de, University of Paderborn, Department of Physics, Warburger Strasse 100, Pad erborn, 33095, Germany
Klaus Lischka
Affiliation:
lischka@upb.de, University of Paderborn, Department of Physics, Warburger Strasse 100, Paderborn, 33095, Germany
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Abstract

Cubic InN films were grown on top of a c-GaN buffer layer by rf-plasma assisted MBE at different growth temperatures. X-Ray diffraction investigations show that the c-InN layers consist of a nearly phase-pure zinc blende (cubic) structure with a small fraction of the wurtzite (hexagonal) phase grown on the (111) facets of the cubic layer. The content of hexagonal inclusions is decreasing with decreasing growth temperature. The full-width at half-maximum (FWHM) of c-InN (002) rocking curve is about 50 arcmin. Low temperature photoluminescence measurements reveal a band gap of about 0.61eV for cubic InN.

Keywords

molecular beam epitaxy (MBE)x-ray diffraction (XRD)III-V

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I08-03
Copyright
Copyright © Materials Research Society 2007

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References

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