Hostname: page-component-54dcc4c588-dbm8p Total loading time: 0 Render date: 2025-10-08T16:59:19.127Z Has data issue: false hasContentIssue false
  • English
  • Français

Manipulation of Nucleation Sites in Solid-State Crystallization of Amorphous Si Films

Published online by Cambridge University Press:  25 February 2011

Hideya Kumomi  and
Takao Yonehara
Hideya Kumomi
Affiliation:
Canon Inc., R/D, 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
Takao Yonehara
Affiliation:
Canon Inc., R/D, 6770 Tamura, Hiratsuka, Kanagawa 254, Japan
Get access

Abstract

Nucleation sites are manipulated in amorphous Si films to control grain location and the size distribution during the solid-state crystallization. The principle of the method is theoretically investigated. Nucleation is suppressed and the sites are periodically formed in the plane of amorphous films by 2-step Si ion implantation. Thermal annealing causes preferential nucleation of single nuclei at the artificial sites and they grow laterally in the film. Consequently, 3 μm large grains were arranged in a matrix with a narrow size distribution.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 645
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Noguchi, T. and Kanaishi, Y., IEEE Electron Device Lett. 10, 543 (1989).Google Scholar
[2] Emoto, F., Senda, K., Fujii, E., Nakamura, A., Yamamoto, A., Umemoto, Y., and Kano, G., IEEE Trans. Electron Devices 37, 1462 (1990).Google Scholar
[3] Yamauchi, N., Hajjar, J-J. J. and Reif, R., IEDM 89–353 (1989).Google Scholar
[4] Spinella, C., Lombardo, S., and Campisano, S. U., Appl. Phys. Lett. 55, 109 (1989).Google Scholar
[5] Iverson, R. B. and Reif, R., J. Appl. Phys. 62, 1675 (1987).Google Scholar
[6] Yonehara, T., Nishigaki, Y., Mizutani, H., Kondoh, S., Yamagata, K., Noma, T., and Ichikawa, T., Appl. Phys. Lett. 52, 1231 (1988).Google Scholar
[7] Kumomi, H. and Yonehara, T., Appl. Phys. Lett. 54, 2648 (1989).Google Scholar
[8] Kumomi, H. and Yonehara, T., Extended Abstracts of the 22nd Conference on Solid State Devices and Materials, 1159 (1990).Google Scholar
[9] Becker, F. S., Oppolzer, H., Weitzel, I., Eicherüller, H., and Schaber, H., J. Appl. Phys. 56, 1233 (1984).Google Scholar
[10] Wu, I.-W., Chiang, A., Fuse, M., Öeçoglu, L., and Huang, T. Y., J. Appl. Phys., 65, 4036 (1989).Google Scholar
[11] Noma, T., Yonehara, T., and Kumomi, H., submitted to Appl. Phys. Lett.Google Scholar