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Macro-Trench Studies of Surface Reaction Probability of a-Si:H Film Growth

Published online by Cambridge University Press:  21 February 2011

A. Nuruddin ,
J. R. Doyle  and
J. R. Abelson
A. Nuruddin
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801
J. R. Doyle
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801
J. R. Abelson
Affiliation:
Coordinated Science Laboratory and the Department of Materials Science and Engineering, University of Illinois, Urbana IL 61801
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Abstract

Using a “macro-trench” technique, the surface reaction probabilities β of the a-Si:H growth precursors for remote hollow cathode silane discharge (HC) and reactive magnetron sputter deposition (RMS) are measured. Both deposition methods produce state of the art photo-electronic quality a-Si:H. For the HC case, β= 0.28 ± 0.05, whereas for RMS deposition β ≈ 0.97 ± 0.05. We conclude that β is not universally correlated with film quality, and discuss mitigating factors present in RMS deposition that permit high quality film to be deposited despite the high film precursor reactivity.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 33
Copyright
Copyright © Materials Research Society 1992

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References

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