Hostname: page-component-54dcc4c588-r5qjk Total loading time: 0 Render date: 2025-10-12T12:59:38.300Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Teperature Synthesis of Silicon Oxide and Oxynitride Films by Reactive Laser Ablation

Published online by Cambridge University Press:  01 January 1992

E. Fogaassy ,
C. Fuchs ,
A. Slaoui ,
S. De unamumo ,
J.-P. Stoquert ,
W. Marine  and
B. Lans
E. Fogaassy
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS no 292), BP 20, F-67037 Strasbourg Cedex 2, France
C. Fuchs
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS no 292), BP 20, F-67037 Strasbourg Cedex 2, France
A. Slaoui
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS no 292), BP 20, F-67037 Strasbourg Cedex 2, France
S. De unamumo
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS no 292), BP 20, F-67037 Strasbourg Cedex 2, France
J.-P. Stoquert
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS no 292), BP 20, F-67037 Strasbourg Cedex 2, France
W. Marine*
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS no 292), BP 20, F-67037 Strasbourg Cedex 2, France
B. Lans*
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS no 292), BP 20, F-67037 Strasbourg Cedex 2, France
*
* URA CNRS 783, Faculté des Sciences de Luminy, Département de Physique, Case 901, F-13288 Marseille Cedex 9, France
** IPCMS, 4 rue Blaise Pascal, F-67070 Strasbourg Cedex, France
Get access

Abstract

Silicon oxide and oxynitride films are deposited, at low temperature (≤ 450°C) by pulsed ArF excimer laser ablation from silicon, silicon monoxide, fused silica and silicon nitride targets, performed under vacuum and in oxygen atmosphere. We investigate in this paper the specific influence of laser fluence, target materials, substrate temtperature and oxygen pressure on the composition and final properties of SiOxNy grown layers. The synthesis of good quality SiO2 films is demonstratedx. By contrast, the preparation of stoichiometric Si7N4 layers by laser ablation has to be optimized.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.See Paine, D.C. and Bravman, J.C., Eds., Laser Ablation for Materials Synthesis, Mat. Res. Soc. Symp. Proc. Vol. 191 (Materials Research Society, Pittsburgh, PA, 1990).Google Scholar
2.See Fogarassy, E. and Lazare, S., Eds., Laser Ablation of Electronic Materials : Basic Mechanisms and Aliplications, E-MRS Monographs Vol. 4 (North Holland, Amsterdam, 1992).Google Scholar
3. Sankur, H. and Cheung, J.T., Appl. Phys. A 47, 271 (1988).Google Scholar
4. Dijkkamp, D., Vernkatesan, T., Wu, X.D., Shaheen, S.A., Jisrawi, N., Min-Lee, Y.H., Mclean, W.L. and Croft, M., Appl. Phys. Lett. 51, 619 (1987).Google Scholar
5. Oesterreicher, H., Bittner, H. and Kothari, B., J. Solid State Chem. 26, 97 (1978).Google Scholar
6. Hanabusa, M. and Suzuki, M., Appl. Phys. Lett. 39, 431 (1981).Google Scholar
7. Fogarassy, E., Fuchs, C., Slaoui, A. and Stoquert, J.P., Appl. Phys. Lett. 57(7), 664 (1990) and Appl. Surf. Sc. 46, 195 (1990).Google Scholar
8. Fogarassy, E., Slaoui, A., Fuchs, C., Stoquert, J.P., Appl. Surf. Sc. 54, 180 (1992).Google Scholar
9. Pliskin, W.A., J. Vac. Sci. Technol. 8, 1064 (1977).Google Scholar
10. Pliskin, W.A. and Lehman, H.S., J. Electrochem. Soc. 112, 1013 (1965).Google Scholar
11. Theil, J.A., Tsu, D.V., Watkins, M.W., Kim, S.S. and Lucovsky, G., J. Vac. Sci. Technol. A8, 1374 (1990).Google Scholar
12. Naiman, M.L., Kirk, C.T., Aucoin, R.J., Terry, F.L., Wyatt, P.W., Senturia, S.D., J. Electrochem. Soc., 131(3), 637 (1984).Google Scholar
13. Eriksson, T.S. and Granqvist, C.G., J. Appl. Phys. 60(6), 2081 (1986).Google Scholar
14. Stoquert, J.P., unpublished.Google Scholar
15. Doolittle, L.R., Nucl. Instr. Meth. B9, 344 (1985).Google Scholar
16. Chao, S.S., Tyler, J.E., Tsu, D.V., Lucovsky, G., Mantini, M.J., J. Vac. Sci. Technol. A5(4), 1283 (1987).Google Scholar
17. Shinn, G.B., Steigerwald, F., Stiegler, H., Sauerbrey, R., Tittel, K.F. and Wilson, W.L. Jr., J. Vac. Sci. Technol. B4(6), 1273 (1986).Google Scholar
18. Braren, B. and Srinivasan, R., J. Vac. Sci. Technol. B6(2), 537 (1988).Google Scholar
19. Philipp, H.R., J. Phys. Chem. Sol., V32, 1935 (1971).Google Scholar
20. Bauer, J., Phys. Stat. Sol.(a), 39 411 (1977).Google Scholar
21. Devine, R.A.B. and Fiori, C. in Defect Properties and Processing of High Technology Non Metallic Materials, Eds. Chen, Y., Kingery, W.D., Stokes, R.J., Mat. Res. Soc. Symp. Proc. Vol. 60 (Materials Research Society, Pittsburgh, PA, 1986) p. 303.Google Scholar
22. Arai, K., Imai, H., Hosono, H., Abe, Y., Imagawa, H., Appl. Phys. Lett. 53(20), 1891 (1988).Google Scholar
23. Rothschild, M., Ehrlich, D.J. and Shaver, D.C., Appl. Phys. Lett. 55(13), 1276 (1989).Google Scholar
24. Brimacombe, R.K., Taylord, R.S. and Leopold, K.E., J. Appl. Phys. 66(9), 4035 (1989).Google Scholar
25. Striganov, A. R. and Sventitskii, N.S., Eds., Tables of Spectral Lines of Neutral and Ionized Atans (IFI-Plenum, New York, 1968). Pearse, R.W.B. and Gaydon, A.G., Eds., The Identification of Molecular Spec (J. Wiley and Sons, New York, 1976).Google Scholar
26. Geohegan, D.B., ref. [21] p. 73 and this proceeding.Google Scholar
27. Marine, W., Gerri, M., Scotto, J.M., Sentis, M., Delaporte, Ph., Forestier, B. and Fontaine, B., Appl. Surf. Sc. 54, 264 (1992).Google Scholar
28. Marine, W., Scotto, J.M. and Gerni, M., Mat. Sc. and Eng. B13, 57 (1992).Google Scholar
29. Wolf, P.J., J. Appl. Phys. 72(4), 1280 (1992).Google Scholar
30. Fuchs, C. and Fogarassy, E. in High Temperature Superconductors : Fundamental Properties and Novel Materials Processing, Eds. Christen, D., Narayan, J., Schneemeyer, L., Mat. Res. Soc. Symp. Proc. Vol. 169 (Materials Research Society, Pittsburgh, PA, 1990) p. 517.Google Scholar
31. Slaoui, A., Fogarassy, E., White, C.W. and Siffert, P., Appl. Phys. Lett. 53, 1832 (1988).Google Scholar
32. Bensch, W. and Bergholz, W., Semicond. Sci. Technol. 5, 421 (1990).Google Scholar
33. Slaoui, A., Fogarassy, E., Fuchs, C. and Siffert, P., J. Appl. Phys. 71(2), 590 (1992).Google Scholar
34. Sankur, H., Nelson, J.G., Pritt, A.T. Jr. and Gunning, W.J., J. Vac. Sci. Technol. A5(1), 15 (1987).Google Scholar
35. Engstran, J. R. and Engel, T., Phys. Rev. B., 41(2), 1038 (1990).Google Scholar