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Low Temperature Chemical Vapor Deposition Of 3C-SiC On 6H-SiC – An X-Ray Triple Crystal Diffractometry And X-Ray Topography Study

Published online by Cambridge University Press:  10 February 2011

J. Chaudhur ,
K. Ignatiev ,
J. H. Edgar ,
Z. Y. Xie  and
Y. Gao
J. Chaudhur
Affiliation:
Wichita State University, Mechanical Engineering Department, Wichita, KS 67260-0133;
K. Ignatiev
Affiliation:
Wichita State University, Mechanical Engineering Department, Wichita, KS 67260-0133;
J. H. Edgar
Affiliation:
Kansas State University, Manhattan, KS 66506-5102.
Z. Y. Xie
Affiliation:
Kansas State University, Manhattan, KS 66506-5102.
Y. Gao
Affiliation:
Kansas State University, Manhattan, KS 66506-5102.
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Extract

Highly perfect 3C-SiC thin films, on 6H-SiC deposited by the chemical vapor deposition at low temperature with various Cl/Si, H/Si and C/Si ratios were characterized by x-ray high resolution triple crystal diffractometry and double crystal topographic methods. The films were epitaxial with a low defect density present (mostly in the range of 107/cm2). X-ray topography revealed stacking faults, low angle grain boundaries, dislocations and inversion double positioning boundaries present in the film and substrate.

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References

REFERENCES

1. For a comprehensive review of the current status of silicon carbide processing and device applications, see the special issues of Physica Status Solidi (a) 162 1 (1997) and (b) 202 1 (1997), edited by W.J. Choyke, H. Matsunami, and G. Penal.Google Scholar
2. Jayathirha, H. N. and Spenser, M. G., Mater. Res. Soo. Syrup. Proc. 410 329 (1996).Google Scholar
3. Kong, H. S., Jiang, B. L., Glass, J. T., Rozgonyi, G. A., and More, K. L., J. Appl. Phys. 63, 2645 (1988).Google Scholar
4. Kong, H. S., Glass, J. T., and Davis, R. F., J. Mater. Res. 4 204 (1989).Google Scholar
5. Gao, Y., Edgar, J. H., Chaudhuri, J., Sidorov, M. V., and Braski, D. N., to be published in J. Cryst. Growth.Google Scholar
6. Chaudhuri, J., Thokala, R., Edgar, J. H. and Sywe, B. S., Thin Solid Films 274, 23 (1996).Google Scholar
7. Chu, S. N. G., Macrander, A. T., Strege, K. E., and Johnson, W. D., J. Appl. Phys. 57, 249 (1985).Google Scholar
8. Horton, M. J. and Averbach, B. L., Acta Metall. Vol.9, 237 (1961).Google Scholar
9. Chaudhuri, J., Ignatiev, K., Edgar, J. H., Xie, Z Y., Gao, Y., to be submitted to J. Electr. Mails.Google Scholar