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Low Resistivity Contact Formation for Lsi Interconnection With Short-Pulse-Laser Induced Mo Cvd

Published online by Cambridge University Press:  26 February 2011

F. Uesugi ,
Y. Morishige ,
T. Shinzawa ,
S. Kishida ,
M. Hirata ,
H. Yamada  and
K. Matsumoto
F. Uesugi
Affiliation:
NEC Corporation, Opto-Electronics Research Laboratories, Miyazaki, 4-1-1, Miyamae-ku, Kawasaki 213, Japan
Y. Morishige
Affiliation:
NEC Corporation, Opto-Electronics Research Laboratories, Miyazaki, 4-1-1, Miyamae-ku, Kawasaki 213, Japan
T. Shinzawa
Affiliation:
NEC Corporation, Opto-Electronics Research Laboratories, Miyazaki, 4-1-1, Miyamae-ku, Kawasaki 213, Japan
S. Kishida
Affiliation:
NEC Corporation, Opto-Electronics Research Laboratories, Miyazaki, 4-1-1, Miyamae-ku, Kawasaki 213, Japan
M. Hirata
Affiliation:
NEC Corporation, System LSI Development Division, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
H. Yamada
Affiliation:
NEC Corporation, System LSI Development Division, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
K. Matsumoto
Affiliation:
NEC Corporation, System LSI Development Division, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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Abstract

The contact characteristics between Al interconnections in LSI's and direct written Mo lines has been substantially improved by adopting, for the first time, short-pulse-laser induced Mo CVD. The linewidth stability upon Al interconnections has also been improved. Transient, localized heating with short laser pulses effectively overcomes the heat dissipation through Al interconnections which degraded contact characteristics and prevented fine drawing near the Al interconnection. This new scheme can appreciably widen the applicable device field of direct writing circuit restructuring.

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References

REFERENCE

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