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Localized Nature of Photoluminescence from Anodically Oxidized Porous Silicon

Published online by Cambridge University Press:  28 February 2011

T. Ito ,
K. Furuta ,
T. Yoneda ,
O. Arakaki ,
A. Hatta  and
A. Hiraki
T. Ito
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan
K. Furuta
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan
T. Yoneda
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan
O. Arakaki
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan
A. Hatta
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan
A. Hiraki
Affiliation:
Osaka University, Department of Electrical Engineering, Suita, Osaka 565, Japan
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Abstract

Photoluminescence (PL) properties from anodically oxidized porous silicon (PS) have been investigated. Large temperature coefficients (-0.5 meV/K) of PL peak energy are observed for relatively strongly oxidized PS specimens which show saturation of PL peak blue shift upon further anodic oxidation. Time-resolved PL data show that the PL decay is characteristic of thermal activation process with an energy of 9-27 meV at low temperatures between 80 and 180 K. Those results can be explained using a luminescence model which assumes several PL centers in the energy gap and considers thermally activated and tunneling processes.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 477
Copyright
Copyright © Materials Research Society 1995

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References

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