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Light-Induced Electron Spin Resonance in Gate-Quality Nitrogen-Rich Amorphous Silicon Nitride: Photo-Production and Photo-Bleaching

Published online by Cambridge University Press:  25 February 2011

E. D. Tober ,
M. S. Crowder  and
J. Janicki
E. D. Tober
Affiliation:
IBM Corp., 5600 Cottle Rd., San Jose, CA and San Jose State Univ., San Jose, CA
M. S. Crowder
Affiliation:
IBM Corp., 5600 Cottle Rd., San Jose, CA
J. Janicki
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY
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Abstract

Electron spin resonance spectroscopy is used to monitor the light-induced, paramagnetic (neutral) defect density in gate-quality nitrogen-rich hydrogenated amorphous silicon nitride (a-SiN1.6:H) thin films. A new phenomenon has been observed in which the light-induced electron spin resonance (LESR) signal can be reduced (photo-bleached) by re-illuminating with monochromatic light. The extent to which the LESR signal is bleached depends strongly upon the incident photon energy used for re-illumination. Photo-bleaching as well as the photo-production of the LESR signal follow a stretched exponential dependence upon illumination time.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 725
Copyright
Copyright © Materials Research Society 1990

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References

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