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Lateral Solid Phase Epitaxy of Silicon Over Oxide

Published online by Cambridge University Press:  22 February 2011

J.A. Roth ,
G.L. Olson  and
L.D. Hess
J.A. Roth
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road Malibu, CA 90265
G.L. Olson
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road Malibu, CA 90265
L.D. Hess
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road Malibu, CA 90265
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Abstract

We review recent progress in the growth of siliconon-insulator films by lateral solid phase epitaxy. The temperature dependence of the rates of random crystallization and solid phase epitaxy are used to predict the maximum growth of Si over oxide achievable by this technique. Actual overgrowth distances of 10 μm obtained in UHV-deposited films are considerably less than the values predicted. Several possible causes of the difference between observed and predicted overgrowth are discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 431
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1.Csepregi, L., Mayer, J.W., and Sigmon, T.W., Phys. Lett. 54A, 157 (1975).Google Scholar
2.Csepregi, L., Kennedy, E.F., Gallagher, T.J., Mayer, J.W. and Sigmon, T.W., J. Appl. Phys. 48, 4234 (1977).Google Scholar
3.Csepregi, L., Kennedy, E.F., Mayer, J.W. and Sigmon, T.W., J. Appl. Phys. 49, 3906 (1978).Google Scholar
4.Olson, G.L., Kokorowski, S.A., Roth, J.A. and Hess, L.D. in Laser-Solid Interactions and Transient Thermal Processing of Materials, Narayan, J., Brown, W.L. and Lemons, R.A., Eds., (North Holland New York, 1983) pp. 141–154.Google Scholar
5.Kokorowski, S.A., Olson, G.L. and Hess, L.D., J. Appl. Phys. 53, 921 (1982).Google Scholar
6.Roth, J.A. and Anderson, C.L., Appl. Phys. Lett. 31, 689 (1977).Google Scholar
7.Bean, J.C. and Poate, J.M., Appl. Phys. Lett. 36, 59 (1980).Google Scholar
8.Roth, J.A., Olson, G.L., Kokorowski, S.A., and Hess, L.D., in Laser and Electron-Beam Solid Interactions and Materials Processing, edited by Gibbons, J.F., Hess, L.D., and Sigmon, T.W. (Elsevier North Holland, New York, 1981), pp. 413–426.Google Scholar
9.Roth, J.A., Kokorowski, S.A., Olson, G.L., and Hess, L.D. in Laser and Electron-Beam Interactions with Solids, Appleton, B.R., Celler, G.K., Eds. (North Holland, New York, 1982), p. 169–176.Google Scholar
10.Kunii, Y., Tabe, M. and Kajiyama, K., Jap. J. Appl. Phys. 22, 605 (1983) Supplement 22–1.Google Scholar
11.Ishiwara, H., Yamamoto, H. and Furukawa, S., Appl. Phys. Lett. 43, 1028 (1983).Google Scholar
12.Yamamoto, H., et al. , presented at the Materials Research Society Symposium on Thin Films and Interfaces,Boston, Mass., 1983 (proceedings to be published).Google Scholar