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Laser Stimulated Growth of Epitaxial Gaas

Published online by Cambridge University Press:  15 February 2011

Walter Roth ,
Herbert Kräutle ,
Annemarie Krings  and
Heinz Beneking
Walter Roth
Affiliation:
Institute of Semiconductor Electronics, Sommerfeldstraße, D-5100 Aachen, FRG
Herbert Kräutle
Affiliation:
Institute of Semiconductor Electronics, Sommerfeldstraße, D-5100 Aachen, FRG
Annemarie Krings
Affiliation:
Institute of Semiconductor Electronics, Sommerfeldstraße, D-5100 Aachen, FRG
Heinz Beneking
Affiliation:
Institute of Semiconductor Electronics, Sommerfeldstraße, D-5100 Aachen, FRG
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Abstract

Stimulated growth of single crystalline GaAs has been obtained by irradiation of (100) oriented GaAs substrates inside an MOCVD reactor with a pulsed Nd-YAG laser.

Process temperatures have been varied between 540°C and 360°C. In the non-irradiated areas, below 480°C substrate temperature the growth rate decreases rapidly, whereas in the irradiated part of the substrate epitaxial layers could be grown in the whole temperature range investigated. Below 450°C, the growth is reaction limited.

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References

LITERATURE

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