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Laser Processing of Porous Silicon

Published online by Cambridge University Press:  15 February 2011

H. Baumgart ,
R. C. Frye ,
L. E. Trimble ,
H. J. Leamy  and
G. K. Celler
H. Baumgart
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
R. C. Frye
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
L. E. Trimble
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
H. J. Leamy
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
G. K. Celler
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
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Abstract

Silicon can be prepared in a unique morphological form by anodic dissolution in HF. The resultant material contains pores of 10–100Å diameter in numbers sufficient toproduce a high surface area, low density single crystal. We have investigated the potential of both pulsed and CW laser processing in this material for dielectric isolation applications. Pulsed processing at λ = 532 nm yields fused surface layer structures that are epitaxial. The porous Si that underlies this surface film is undisturbed and can beoxidized to produce vertical isolation from the substrate.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 609
Copyright
Copyright © Materials Research Society 1982

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References

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