Hostname: page-component-54dcc4c588-scsgl Total loading time: 0 Render date: 2025-10-07T02:37:01.604Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Induced Crystal Growth of Silicon Islands on Amorphous Substrates

Published online by Cambridge University Press:  15 February 2011

D. K. Biegelsen ,
N. M. Johnson ,
D. J. Bartelink  and
M. D. Moyer
D. K. Biegelsen
Affiliation:
Xerox Palo Alto Research Centers, 3333 Coyote Hill Road, Palo Alto, California 94304, USA
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Centers, 3333 Coyote Hill Road, Palo Alto, California 94304, USA
D. J. Bartelink
Affiliation:
Xerox Palo Alto Research Centers, 3333 Coyote Hill Road, Palo Alto, California 94304, USA
M. D. Moyer
Affiliation:
Xerox Palo Alto Research Centers, 3333 Coyote Hill Road, Palo Alto, California 94304, USA
Get access

Abstract

The importance of controlled lateral heat flow in the growth of single crystal silicon islands on amorphous substrates is demonstrated. In one approach the thermal profile on and around the islands is determined by varying the optical absorption with a variety of thin film structures. In another, beam spot shaping is used. Competitive nucleation is suppressed and continued in-plane epitaxial zone growth is enhanced. In this way we are able to produce single crystal islands 20μm wide and >20μm long. Routine production of such islands would enable new thin film transistor technologies.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Maserjian, J., Solid State Electronics 6, 477 (1963).Google Scholar
2. Gibbons, J. F., Lee, K. F., Magee, T. J., Peng, J. and Ormond, R., Appl. Phys. Letters 34, 831 (1979);Google Scholar
2a Biegelsen, D. K., Johnson, N. M., McKinley, G. T. and Moyer, M. D., Laser and Electron Beam Processing of Materials, White, C. W. and Peercy, P. S. eds. (Academic Press, New York, 1980) pp. 569–574.Google Scholar
3. Holloman, J. H. and Turnbull, D., Prog. in Metal Phys. 4, 333 (1953).Google Scholar
4. See for example Lee, W. H., Progress in Optics 16, 121 (1978).Google Scholar
5. Thomas, G., Transmission Electron Microscopy of Metals (John Wiley & Sons, New York, 1966).Google Scholar