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Laser Induced Chemical Vapor Deposition of GaN

Published online by Cambridge University Press:  21 February 2011

A. Kobayashi ,
T. Asai ,
S. Kawai  and
P.J. Chong
A. Kobayashi
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan
T. Asai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan
S. Kawai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, Japan
P.J. Chong
Affiliation:
Korean Research Institute of Chemical Technology, Daduck Science Town, Seoul, Korea
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Abstract

Thin films of GaN were grown on the Al2O3 (0001) substrate by the laserinduced chemical vapor deposition technique. Morphology were different for the films grown with and without laser irradiation. Moreover, the density of nucleus and the growth rate in the case of the growth with the parallel irradiation were greater than those without irradiation. Differences were attributed to presence of photo-dissociated species in the case of the laser irradiation. Additional irradiation normal to the substrate decreased the rate, probably because of the accelerated desorption of the reactive adsorbed species.

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References

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