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Laser Annealing of Te-Implanted III-V Semiconductors Studied by Mossbauer Spectroscopy

Published online by Cambridge University Press:  15 February 2011

M. Van Rossum ,
I. Dezsi ,
G. Langouche ,
J. De Bruyn  and
R. Coussement
M. Van Rossum
Affiliation:
Instituut voor Kern– en Stralingsfysika, Leuven University, Belgium
I. Dezsi
Affiliation:
Instituut voor Kern– en Stralingsfysika, Leuven University, Belgium
G. Langouche
Affiliation:
Instituut voor Kern– en Stralingsfysika, Leuven University, Belgium
J. De Bruyn
Affiliation:
Instituut voor Kern– en Stralingsfysika, Leuven University, Belgium
R. Coussement
Affiliation:
Instituut voor Kern– en Stralingsfysika, Leuven University, Belgium
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Abstract

The laser annealing behaviour of Te-implanted GaAs, GaSb, GaP and InP has been studied by Mössbauer Spectroscopy. The spectra of the as-implanted samples are characterized by a quadrupole split multiplet, showing that the Te ions come to rest at non-substitutional lattice sites. The laser annealing is shown to shift the implanted impurities towards substitutional positions. The efficiency of the laser annealing procedure is very similar for all lattices under study.

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References

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