Hostname: page-component-54dcc4c588-54gsr Total loading time: 0 Render date: 2025-10-05T15:10:02.278Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Annealing of Narrow Gap HgTe-Based Alloys*

Published online by Cambridge University Press:  25 February 2011

R. E. Kremer ,
F. G. Moore ,
M. R. Tamjidi  and
Y. Tang
R. E. Kremer
Affiliation:
Oregon Graduate Center, 19600 NW Von Neumann Dr., Beaverton, OR 97006
F. G. Moore
Affiliation:
Oregon Graduate Center, 19600 NW Von Neumann Dr., Beaverton, OR 97006
M. R. Tamjidi
Affiliation:
Oregon Graduate Center, 19600 NW Von Neumann Dr., Beaverton, OR 97006
Y. Tang
Affiliation:
Oregon Graduate Center, 19600 NW Von Neumann Dr., Beaverton, OR 97006
Get access

Abstract

We have used a cw CO2 laser to study the effects of rapidly annealing HgTe-based alloys. Both as-grown and thermally annealed samples of HgCdTe, HgMnTe, HgZnTe, and HgMgTe have been examined for mercury loss and surface damage using energy-dispersive x-ray analysis and optical reflectivity measurements. Small, but systematic differences were found between the asgrown and the thermally annealed samples and among the various materials studied. No degradation of the material at all was observed when the samples were cooled to 77 K and exposed to the laser.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 179
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

Footnotes

*

This work was supported by the National Science Foundation through Grant No. ECS-8402080.

References

REFERENCES

This work was supported by the National Science Foundation through Grant No. ECS-8402080.Google Scholar
Jones, C. L., Quelch, M. J. T., Capper, P., and Gosney, J. J., J. Appl. Phys. 53, 9080 (1982).Google Scholar
[2] Bubulac, L. O., Tennant, W. E., Riedal, R. A., and Magee, T. J., J. Vac. Sci. Technol. 21, 251 (1982).Google Scholar
[3] Bahir, G., Kalish, R., and Nemirovsky, Y., Appl. Phys. Lett. 41, 1057 (1982).CrossRefGoogle Scholar
[4] Sher, A., Chen, A-B., and van Schilfgaarde, M., J. Vac. Soi. Technol. A 4, 1965 (1986).Google Scholar
[5] Kremer, R. E. and Tamjidi, H. R., J. Crystal Growth 75, 415 (1986).Google Scholar
[6] Bartlett, B. E., Capper, P., Harris, J. E., and Ouelch, M. J. T., J. Crystal Growth 46, 623 (1979).Google Scholar
[7] Tamjidi, M. R. and Kremer, R. E., Mater. Lett. 4, 90 (1986).Google Scholar
[8] Becla, P., private communication.Google Scholar
[9] Furdyna, J. K., Giriat, V., Mitchell, D. F., and Sproule, G. I., J. Solid State Chem. 46, 349 (1983).CrossRefGoogle Scholar
[10] Pamplin, B. R. in CRC Handbook of Chemistry and Physics, 63rd Ed., ed. by Weast, R. E. (CRC Press, Cleveland, 1982), p. E–98.Google Scholar