Hostname: page-component-54dcc4c588-54gsr Total loading time: 0 Render date: 2025-10-10T20:52:44.351Z Has data issue: false hasContentIssue false
  • English
  • Français

Kinetics of Light-Induced Degradation of a-Si:H Solar Cells Compared to I-Layer Films

Published online by Cambridge University Press:  21 February 2011

X.R. Li ,
S. Wagner ,
M. Bennett  and
S. Fonash
X.R. Li
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
M. Bennett
Affiliation:
Solarex Thin Film Division, Newtown, PA 18940
S. Fonash
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
Get access

Abstract

We report the CPM defect density of a-Si:H material and the performance characteristics of pin solar cells during high-intensity light-soaking. In one group of experiments we compared the effects of soaking with monochromatic light from a Kr+ laser to white light from a Xe arc lamp. The effects are identical for the same electron-hole pair generation rate. In a second group of experiments we light-soaked at the two different temperatures of 50°C and 90°C. At 90°C the defect density saturates at a lower value than at 50°C, and correspondingly the cell performance parameters saturate at higher values.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 899
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Banerjee, A., Guha, S., Pawlikiewicz, A., Wolf, D. and Yang, J., Amer. Inst. Phys. Conf. Proc. 234 186 (1991).Google Scholar
[2] Pawlikiewicz, A., Banerjee, A. and Guha, S., Mat. Res. Soc. Symp. Proc. 219 (1991).CrossRefGoogle Scholar
[3] Wagner, S., Xu, X., Li, X. R., Shen, D. S., Isomura, M., Delahoy, A. E., Li, X., Bennett, M., Arch, J. K., Nicque, J. -L. and Fonash, S. J., 1307, Proc. 22nd IEEE PVSC (1991).Google Scholar
[4] Yang, L., Chen, L. and Catalano, A., Amer. Inst. Phys. Conf. Proc. 234, 273 (1991).Google Scholar
[5] Tonon, T., Li, X. and Delahoy, A. E., Amer. Inst. Phys. Conf. Proc. 234, 259 (1991).Google Scholar
[6] Chen, L. and Yang, L., J. Non-CrysL Solids, 137&138 1185 (1991).CrossRefGoogle Scholar
[7] Guha, S., Huang, C-Y. and Hudgens, S.J., Appl. Phys. Lett. 45, 1 (1984).Google Scholar
[8] Redfield, D., Appl. Phys. Lett. 52, 6 (1988).CrossRefGoogle Scholar
[9] Street, R., Mater. Res. Soc. Proc. 95, 13 (1987).CrossRefGoogle Scholar
[10] Li, X. R., Wagner, S., Bennett, M. and Fonash, S. J., in these proceedings.Google Scholar
[11] Stutzmann, M., Jackson, W. B. and Tsai, C. C., Phys. Rev. B 32, 1 (1985).CrossRefGoogle Scholar
[12] Arch, J., Rubinelli, F. A., Hou, J.-Y and Fonash, S. J., J. Appl. Phys. 69, 7057 (1991).CrossRefGoogle Scholar