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Kinetics of Growth and Recovery of Light-Induced Defects Under High-Intensity Illumination

Published online by Cambridge University Press:  21 February 2011

Masao Isomura  and
Sigurd Wagner
Masao Isomura
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, NJ 08544
Sigurd Wagner
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, NJ 08544
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Abstract

We report a study of the rates of generation and of annealing of the light-induced defects in hydrogenated amorphous silicon (a-Si:H). The rates of generation are found to be sensitive to temperature when the light intensity is high. This increased sensitivity to temperature at high rates suggests that a temperature-activated process such as hydrogen motion controls the rates of generation more when they are high. The rate of annealing at 130°C is strongly accelerated by illumination, and depends strongly on the light intensity. This may be explained by the diffusion of hydrogen, accelerated by excess carriers.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 473
Copyright
Copyright © Materials Research Society 1992

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References

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