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Isothermal I-V Characteristics of 4H-SiC p-n Diodes with Low Series Differential Resistivity at Avalanche Breakdown

Published online by Cambridge University Press:  15 March 2011

Konstantin V. Vassilevski ,
Konstantinos Zekentes ,
Alexandr V. Zorenko  and
Leonid P. Romanov
Konstantin V. Vassilevski*
Affiliation:
Microelectronics Research Group, FO.R.T.H., Vassilika Vouton, Heraklion, 71110, Greece Ioffe Institute, 26, Politechnicheskaya str., St. Petersburg, 194021, Russian Federation
Konstantinos Zekentes
Affiliation:
Ioffe Institute, 26, Politechnicheskaya str., St. Petersburg, 194021, Russian Federation
Alexandr V. Zorenko
Affiliation:
State Scientific & Research Institute “Orion”, Kyiv, 252057, Ukraine.
Leonid P. Romanov
Affiliation:
Joint Stock Company “Svetlana-Electronpribor”, St. Petersburg, 194021, Russian Federation.
*
# Corresponding author: FAX: 30-81-394106; e-mail: kostya@physics.uoc.gr
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Abstract

4H-SiC p + -n-n + diodes of low series resistivity were fabricated and packaged. The diodes exhibited a homogeneous avalanche breakdown at voltage U b =260V. These diodes were capable to dissipate a pulsed power density of 7.4 MW/cm2 at avalanche current. Isothermal I-V characteristics of fabricated diodes were measured at forward bias and at avalanche breakdown. An experimental determination of the electron saturated drift velocity along the c-axis in 4H-SiC was performed for the first time. It was found to be 7.7×106cm/s at room temperature.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T1.8.1
Copyright
Copyright © Materials Research Society 2000

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References

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