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Islanding and Surface Diffusion in Semiconductor Heteroepitaxy: Ge on Si

Published online by Cambridge University Press:  26 February 2011

G. J. Fisanick ,
H.-J. Gossmann  and
P. Kuo
G. J. Fisanick
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
H.-J. Gossmann
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J. 07974
P. Kuo
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Islanding and surface diffusion for Ge on Si(111)7×7 and Si(100)2×1 surfaces were examined in a UHV apparatus with in situ scanning Auger/SEM capabilities. At room-temperature uniform growth is observed, while elevated temperatures lead to Stranski-Krastanov growth with complex island size distributions. Extensive surface diffusion is observed on Si(100)2×l; however, surface diffusion is demonstrated to be extremely sensitive to contamination with carbon on the order of ≈0.05 ML, as well as to e-beam irradiation.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 25
Copyright
Copyright © Materials Research Society 1988

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References

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