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Iron Redistribution in Aluminum Thin Films

Published online by Cambridge University Press:  21 February 2011

David L. Barr ,
G.J. Gualtieri ,
C.B. Case ,
M.A. Marcus  and
W.L. Brown
David L. Barr
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
G.J. Gualtieri
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
C.B. Case
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
M.A. Marcus
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
W.L. Brown
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
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Abstract

Strongly non uniform Fe depth distributions have been observed in AI(0.13 at% Fe) thin films deposited at temperatures of 350ºC and above. The concentration of Fe is uniform in depth at a deposition temperature of 300ºC but is increasingly enhanced toward the substrate interface at 450ºC. Subsequent annealing produces only a slight redistribution of Fe. The Fe is primarily present as precipitates smaller than 100 nm. A model of grain boundary diffusion of Fe and precipitate formation and grain growth is proposed to explain the observed behavior.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 417
Copyright
Copyright © Materials Research Society 1993

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References

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